Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile (eNVM) candidate because of its excellent switching (RS) properties and CMOS process compatibility. However, detailed understanding the nature thickness-dependent RS systematic thermal degradation research about effect post-metallization annealing (PMA) time on oxygen vacancy distribution performance still needs to be included. Herein, impact thickness Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed simple strategy regulate leakage current, forming voltage, window, uniformity by varying layer. Moreover, it found that device 15 nm shows minimum cycle-to-cycle variability (CCV) device-to-device (DDV), good retention (105 s at 85 °C), superior endurance (104). In addition, Al/Ti(15 nm)/HfO2/TiN under different PMA times 400 °C carried out. It current increases voltage window decrease increase in due thermally activated oxidation Ti. when 30 min, can no longer capture from HfO2 formation self-limited TiOx. Therefore, stability 90 min uniformity, endurance, or retention. This work demonstrates Ti/HfO2-based RRAM back-end-of-line compatibility high up for over hour.